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 ZXTP23140BFH 140V SOT23 PNP medium power transistor
Summary
V(BR)CEX > -160V, V(BR)CEO > -140V IC(CONT) = -2.5A RCE(sat) = 76m PD = 1.25W typical VCE(sat) < -95mV @ -1A
Description
Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.
C
B
Features
* * * * Higher power dissipation SOT23 package High peak current Low saturation voltage 160V forward blocking voltage
E
Applications
* * * DC - DC converters Motor drive High side switches
E C B
Ordering information
Device ZXTP23140BFHTA Reel size (inches) 7 Tape width 8mm Quantity per reel 3,000
Pinout - top view
Device marking
955
Issue 1 - February 2006
(c) Zetex Semiconductors plc 2006
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ZXTP23140BFH
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current (b) Base current Power dissipation @ TA=25C (a) Linear derating factor (a) Power dissipation @ TA=25C (b) linear derating factor (b) Power dissipation @ TA=25C (c) linear derating factor (c) Power dissipation @ TA=25C (d) linear derating factor (d) Operating and storage temperature Tj:Tstg PD PD PD Symbol VCBO V(BR)CEX VCEO VEBO ICM IC IB PD Limit -160 -160 -140 -7.0 -5 -2.5 -1 0.73 5.84 1.05 8.4 1.25 9.6 1.81 14.5 -55 to +150 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient (a) Junction to ambient (b) Junction to ambient (c) Junction to ambient (d) Symbol R JA R JA R JA R JA Limit 171 119 100 69 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5sec.
Issue 1 - February 2006
(c) Zetex Semiconductors plc 2006
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ZXTP23140BFH
Characteristics
Issue 1 - February 2006
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ZXTP23140BFH
ELECTRICAL CHARACTERISTICS (at TAMB = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Symbol V(BR)CBO V(BR)CEX Min. -160 -160 Typ. -180 -180 Max. Unit Conditions V V IC=-100 A IC =-100 A, RBE 1k OR -0.25V < VBE < 1V IC=-10mA (*) IE=-100 A VCE =-130V; RBE 1k OR -0.25V < VBE < 1V VCB=-130V VEB=-6V IC= -10mA, VCE=-5V (*) 300 IC=-1A, VCE=-5V (*) Ic=-2.5A, VCE=-5V -55 -95 -280 mV mV mV V V IC=-100mA, IB=-5mA (*) IC=-1A, IB=-100mA (*) IC=-2.5A, IB=-250mA (*) IC=-2.5A, IB=-250mA (*) IC=-2.5A, VCE=-5V (*)
V(BR)CEO
-140 -7.0
-160 -8.2 -100
V V nA
Emitter-base breakdown voltage V(BR)EBO Collector-emitter cut-off current ICEX
Collector-base cut-off current Emitter-base cut-off current Static forward current transfer ratio
ICBO IEBO HFE 100 100 40
<1 <1 200 180 100 -45 -80 -190
-20 -10
nA nA
Collector-emitter saturation voltage
VCE(sat)
Base-emitter saturation voltage Base-emitter turn-on voltage Transition frequency Output capacitance Turn-on time Turn-off time
VBE(sat) VBE(on) fT Cobo t (on) t (off)
-0.89 -1.00 -0.78 -0.90 130 30.9 132.4 345.5
2%.
MHz Ic=-100mA, VCE=-10V, f=50MHz pF ns ns VCB=-10V, f=1MHz VCC=-10V, IC=-2A, IB1=IB2=-200mA
NOTES: (*) Measured under pulsed conditions. Pulse width=300 S. Duty cycle
Issue 1 - February 2006
(c) Zetex Semiconductors plc 2006
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ZXTP23140BFH
Typical characteristics
Issue 1 - February 2006
(c) Zetex Semiconductors plc 2006
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ZXTP23140BFH
Package outline - SOT23
L H N D 3 leads G
M
B
A
C K
F
Dim. A B C D F G
Millimeters Min. 2.67 1.20 0.37 0.085 Max. 3.05 1.40 1.10 0.53 0.15
Inches Min. 0.105 0.047 0.015 0.0034 Max. 0.120 0.055 0.043 0.021 0.0059
Dim. H K L M N -
Millimeters Min. 0.33 0.01 2.10 0.45 Max. 0.51 0.10 2.50 0.64 -
Inches Max. 0.013 0.0004 0.083 0.018 Max. 0.020 0.004 0.0985 0.025 -
0.95 NOM
0.0375 NOM
1.90 NOM
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - February 2006
(c) Zetex Semiconductors plc 2006
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